| PART |
Description |
Maker |
| FDMA1027P |
CAP CER 10UF 6.3V X5R 1206 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC
|
Fairchild Semiconductor, Corp.
|
| PE9601EK 9601-00 9601-01 9601-11 PE9601 |
2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOS?/a> Integer-N PLL for Rad Hard Applications
2200 MHz UltraCMOSInteger-N PLL for Rad Hard Applications
2200 MHz UltraCMOS⑩ Integer-N PLL for Rad Hard Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| NTE6116 NTE6118 NTE6122 |
Industrial Rectifier 2200 Amp
Industrial Rectifier, 2200 Amp
|
NTE[NTE Electronics]
|
| PE42742 42742-00 42742-51 42742-52 |
75 Ω Terminated - 2200 MHz SPDT CATV UltraCMOS?/a> Switch Featuring Unpowered Operation
75 Ω Terminated - 2200 MHz SPDT CATV UltraCMOS Switch Featuring Unpowered Operation
75 ヘ Terminated - 2200 MHz SPDT CATV UltraCMOS⑩ Switch Featuring Unpowered Operation
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| TSL0808RA-222JR17-PF |
1 ELEMENT, 2200 uH, GENERAL PURPOSE INDUCTOR RADIAL LEADED
|
Mini-Systems, Inc.
|
| STC03DE220HP C03DE220HP |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 ?
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 з
|
STMicroelectronics
|
| 2225-4L |
BJT
3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz
|
GHz Technology
|
| MA4EXP190H1-1277T |
Silicon Double Balanced HMIC Mixer 1700 - 2200 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTMA210404FL PTMA210404FL09 |
Dual Wideband RF LDMOS Power Amplifier 40 W, 1800 鈥?2200 MHz
|
Infineon Technologies AG
|
| NACZF222K6.3V16X17TR13F |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 2200 uF, SURFACE MOUNT
|
NIC Components, Corp.
|
|
